symbol v ds v gs i dm t j , t stg symbol ty p max 300 360 340 425 r jl 280 320 absolute maximum ratings t a =25c unless otherwise noted parameter maximum units v gate-source voltage 8 v i d 1 drain-source voltage 20 t a =25c p d 0.35 a t a =70c 0.75 pulsed drain current b 5 continuous drain current a t a =25c maximum junction-to-ambient a steady-state c/w w t a =70c 0.22 junction and storage temperature range -55 to 150 c power dissipation a maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w AO7404 features v ds (v) = 20v i d = 1 a (v gs = 4.5v) r ds(on) < 225m ? (v gs = 4.5v) r ds(on) < 290m ? (v gs = 2.5v) r ds(on) < 425m ? (v gs = 1.8v) the AO7404 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v, in the small sot323 footprint. it can be used for a wide variety of applications, including load switching, low current inverters and low current dc-dc converters.it is esd protected to 1kv hbm. standard product a o7404 is pb-free (meets rohs & sony 259 specifications). AO7404l is a green product ordering option. AO7404 and AO7404l are electrically identical. s g d sc-70 (sot-323) top view d s g general description effect transistor n-channel enhancement mode field www.freescale.net.cn 1 / 4
AO7404 symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 25 a v gs(th) 0.4 0.55 0.8 v i d(on) 5a 186 225 t j =125c 262 315 241 290 m ? 326 425 m ? g fs 2.6 s v sd 0.69 1 v i s 0.4 a c iss 101 pf c oss 17 pf c rss 14 pf r g 3 ? q g 1.57 nc q gs 0.13 nc q gd 0.36 nc t d(on) 3.2 ns t r 4ns t d(off) 15.5 ns t f 2.4 ns t rr 6.7 ns q rr 1.6 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =1a, di/dt=100a/ s body diode reverse recovery charge i f =1a, di/dt=100a/ s turn-on delaytime v gs =5v, v ds =10v, r l =10 ? , r gen =6 ? turn-on rise time turn-off delaytime turn-off fall time gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =10v, i d =1a gate source charge gate drain charge maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =10v, f=1mhz output capacitance reverse transfer capacitance forward transconductance v ds =5v, i d =1a diode forward voltage i s =1a,v gs =0v r ds(on) static drain-source on-resistance v gs =4.5v, i d =1a m ? v gs =2.5v, i d =0.85a v gs =1.8v, i d =0.7a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v a gate-body leakage current v ds =0v, v gs =8v drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =16v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 3 : aug 2005 www.freescale.net.cn 2 / 4
AO7404 typical electrical and thermal characteristics 0 2 4 6 8 10 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 3v 2.5v 8v 4v 3.5v 5v 0 1 2 3 4 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds =5v 160 200 240 280 320 360 400 440 480 01234 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =1.8v v gs =2.5v v gs =4.5v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.4 0.8 1.2 1.6 2.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =1.8v v gs =4.5v v gs =2.5v i d =0.7a 160 200 240 280 320 360 400 440 480 12345678 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =1a 25c 125c i d =1a i d =0.85a www.freescale.net.cn 3 / 4
AO7404 typical electrical and thermal characteristics 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 50 100 150 200 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c r ss 0 4 8 12 16 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 1 0s d c r ds(on) limited t j(max) =150c t a =25c 10 s v ds =10v i d =1a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =360c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c t on t p d t on p d www.freescale.net.cn 4 / 4
|
